"JOURNAL OF RADIO ELECTRONICS" (Zhurnal Radioelektroniki)  ISSN 1684-1719, N 8, 2019

contents of issue      DOI  10.30898/1684-1719.2019.8.9     full text in Russian (pdf)  

On approach to increase integration rate of elements of a two stage amplifier with Miller compensation

 

E. L. Pankratov 1,2

1 Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia

2 Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod 603950, Russia

 

The paper is received on July 10, 2019

 

Abstract. In this paper we introduce an approach to increase integration rate of elements of a two stage amplifier with Miller compensation. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

Keywords: two stage amplifier with Miller compensation; increasing integration rate of field-effect heterotransistors; optimization of manufacturing.

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For citation:

E. L. Pankratov. On approach to increase integration rate of elements of a two stage amplifier with Miller compensation. Zhurnal Radioelektroniki - Journal of Radio Electronics. 2019. No. 8. Available at http://jre.cplire.ru/jre/aug19/9/text.pdf

DOI  10.30898/1684-1719.2019.8.9